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SFS9926 Datasheet(PDF) 2 Page - SemiWell Semiconductor

Part # SFS9926
Description  Dual N-Channel MOSFET
PDF  6 Pages
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Manufacturer  SEMIWELL [SemiWell Semiconductor]
Direct Link  http://www.semiwellsemi.co.kr
Logo SEMIWELL - SemiWell Semiconductor

SFS9926 Datasheet(HTML) 2 Page - SemiWell Semiconductor

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SFS9926
Electrical Characteristics ( T
J = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
20
-
-
V
Δ
BVDSS/
Δ
TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-24
-
mV/°C
IDSS
Drain-Source Leakage Current
VDS = 16V, VGS = 0V
--
1
uA
IGSS
Gate-Source Leakage, Forward
VGS = 12V, VDS = 0V
100
nA
Gate-Source Leakage, Reverse
VGS = -12V, VDS = 0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
0.5
-
1.5
V
RDS(ON)
Static Drain-Source On-state
Resistance
VGS = 4.5 V, ID = 6.5A
VGS = 2.5 V, ID = 5.4A
-
-
0.025
0.036
0.030
0.043
Dynamic Characteristics
Ciss
Input Capacitance
VGS =0 V, VDS =10V, f = 1MHz
-645
-
pF
Coss
Output Capacitance
-
350
-
Crss
Reverse Transfer Capacitance
-
115
-
Dynamic Characteristics
td(on)
Turn-on Delay Time
VDD =10V, ID =1A, RG =50 Ω
VGS =4.5V
(Note 2,3)
-9
28
ns
tr
Rise Time
-
45
100
td(off)
Turn-off Delay Time
-
95
200
tf
Fall Time
-
60
130
Qg
Total Gate Charge
VDS =10V, VGS =4.5V, ID =4.5A
(Note 2,3)
-14
18
nC
Qgs
Gate-Source Charge
-
2.5
-
Qgd
Gate-Drain Charge(Miller Charge)
-
5
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
IS
Maximum Continuous Diode Forward Current
-
-
1.3
A
VSD
Diode Forward Voltage
IS =1.3A, VGS =0V
(Note 2)
--
1.2
V
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
4. Surface mounted on 1 inch2 Cu board.
2/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.



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