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SFS9926 Datasheet(PDF) 2 Page - SemiWell Semiconductor |
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SFS9926 Datasheet(HTML) 2 Page - SemiWell Semiconductor |
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2 / 6 page ![]() SFS9926 Electrical Characteristics ( T J = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -24 - mV/°C IDSS Drain-Source Leakage Current VDS = 16V, VGS = 0V -- 1 uA IGSS Gate-Source Leakage, Forward VGS = 12V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -12V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 0.5 - 1.5 V RDS(ON) Static Drain-Source On-state Resistance VGS = 4.5 V, ID = 6.5A VGS = 2.5 V, ID = 5.4A - - 0.025 0.036 0.030 0.043 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =10V, f = 1MHz -645 - pF Coss Output Capacitance - 350 - Crss Reverse Transfer Capacitance - 115 - Dynamic Characteristics td(on) Turn-on Delay Time VDD =10V, ID =1A, RG =50 Ω VGS =4.5V (Note 2,3) -9 28 ns tr Rise Time - 45 100 td(off) Turn-off Delay Time - 95 200 tf Fall Time - 60 130 Qg Total Gate Charge VDS =10V, VGS =4.5V, ID =4.5A (Note 2,3) -14 18 nC Qgs Gate-Source Charge - 2.5 - Qgd Gate-Drain Charge(Miller Charge) - 5 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Maximum Continuous Diode Forward Current - - 1.3 A VSD Diode Forward Voltage IS =1.3A, VGS =0V (Note 2) -- 1.2 V ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. 4. Surface mounted on 1 inch2 Cu board. 2/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. |
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