EMLS232TA datasheet(7/14 Pages) EMLSI

7 / 14 page

Rev 0.3

EMLS232TA Series

512K x 32 x 4Banks Low Power SDRAM

DC CHARACTERISRICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0oC~ 70oC for Extended, -25oC~ 85oC for Commercial)

NOTE :

1.Measured with outputs open.

2.Refresh period is 64 .

3.Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

133MHz

Operating Current

(One Bank Active)

ICC1

Active mode; Burst length = 2; Read or Write;

tRC

tRC(min); CL=3; tCC=10

IO= 0

Precharge Standby Cur-

rent in power-down

mode

ICC2P

CKE

VIL(max), tCC=10

0.5

ICC2PS

CKE & CLK

VIL(max), tCC =

0.5

Precharge Standby Cur-

rent in non power-down

mode

ICC2N

CKE

VIH(min), CS

VIH(min), tCC = 10

Input signals are changed one time during 20

ICC2NS

CKE

VIH(min), CLK

VIL(max), tCC =

Input signals are stable

Active Standby Current

in power-down mode

ICC3P

CKE

VIL(max), tCC = 10

ICC3PS

CKE & CLK

VIL(max), tCC =

Active Standby Current

in non power-down

mode (One Bank Active)

ICC3N

CKE

VIH(min), CS

VIH(min), tCC = 10

Input signals are changed one time during 20

ICC3NS

CKE

VIH(min), CLK

VIL(max), tCC =

Input signals are stable

Operating Current

(Burst Mode)

ICC4

IO = 0

Page burst, CL=3, Read or Write, tCC = 10

4Banks Activated

110

Refresh Current

ICC5

tARFC

tARFC(min), tCC = 10

110

Self Refresh Current

ICC6

CKE

0.2V

Internal Auto

TCSR

Max

Full Array

TBD

250

1/2 of Full Array

TBD

190

1/4 of Full Array

TBD

150

Deep Power Down

mode current

ICC7

EMLS232TA Datasheet(PDF) 7 Page - Emerging Memory & Logic Solutions Inc

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