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EMC646SP16K Datasheet(PDF) 13 Page - Emerging Memory & Logic Solutions Inc

Part # EMC646SP16K
Description  4Mx16 bit CellularRAM AD-MUX
PDF  52 Pages
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMC646SP16K Datasheet(HTML) 13 Page - Emerging Memory & Logic Solutions Inc

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EMC646SP16K
4Mx16 CellularRAM AD-MUX
13
Preliminary
Figure 6: Burst Mode WRITE (4-word burst, OE# HIGH)
Note: Non-default BCR settings for burst mode WRITE (4-word burst): Fixed or variable latency;
latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
The size of a burst can be specified in the BCR either as a fixed length or continuous. Fixed-length bursts consist of four, eight, sixteen, or thirty-two
words. Continuous bursts have the ability to start at a specified address and burst to the end of the address. It goes back to the first address and
continues to burst when continuous bursts meet the end of address.
The latency count stored in the BCR defines the number of clock cycles that elapse before the initial data value is transferred between the processor and
CellularRAM device. The initial latency for READ operations can be configured as fixed or variable (WRITE operations always use fixed latency). Variable
latency allows the CellularRAM to be configured for minimum latency at high clock frequencies, but the controller must monitor WAIT to detect any conflict
with refresh cycles.
Fixed latency outputs the first data word after the worst-case access delay, including allowance for refresh collisions. The initial latency time and clock
speed determine the latency count setting. Fixed latency is used when the controller cannot monitor WAIT. Fixed latency also provides improved
performance at lower clock frequencies.
The WAIT output asserts when a burst is initiated, and de-asserts to indicate when data is to be transferred into (or out of ) the memory. WAIT will again
be asserted at the boundary of the row, unless wrapping within the burst length. With wrap off, the CellularRAM device will restore the previous row’s data
and access the next row, WAIT will be de-asserted, and the burst can continue across the row boundary(See Figeure 29 on page 42 for a READ, Figure
34 on page 47 for a WRITE). If the burst is to terminate at the row boundary, CE# must go HIGH within 2 clocks of the last data(See Figure 28 on page
41). CE# must go HIGH before any clock edge following the last word of a defined-length burst WRITE(See Figure 31 and 32 on pages 44 and 45).
The CE# LOW time is limited by refresh considerations. CE# must not stay LOW longer than tCEM. If a burst suspension will cause CE# to remain LOW
for longer than tCEM, CE# should be taken HIGH and the burst restarted with a new CE# LOW/ADV# LOW cycle.
CLK
Latency Code 2(3 clocks)
Don’t Care
WRITE Burst Identified
(WE# = LOW)
WRITE Burst Identified
(WE# = LOW)
CE#
A[21:16]
ADV#
WE#
LB#/UB#
WAIT
A/DQ[15:0]
Address
Address
Address
Address
D0
D1
D2
D3



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