EMC646SP16JS-85L datasheet(2/65 Pages) EMLSI

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EMC646SP16J

4Mx16 CellularRAM

Preliminary

64Mb Async/Page/Burst CellularRAM

FEATURES

- Sigle device supports asynchrous, page and burst operation

- Vcc, VccQ voltages:

1.7V.1.95V VCC

1.7V.1.95V VCCQ

- Random access time: 70ns

- Burst mode READ and WRITE access:

4, 8, 16, or 32 words, or continuous burst

Burst wrap or sequential

Max clock rate: 104 MHz (tCLK = 9.62ns)

Burst initial latency: 38.5ns (4 clocks) @ 104 MHz ,

tACLK: 7ns @ 104 MHz

- Page mode READ access:

Sixteen-word page size

Interpage READ access : 70ns

Intrapage READ access : 20ns

- Low power consumption:

Asynchronous READ: <25mA

Initial access, burst READ:

(38.5ns [4 clocks] @ 104 MHz) <35mA

Continuous burst READ: <30mA

- Low-power features

On-chip temperature compensated self refresh (TCSR)

Partial array refresh (PAR)

Deep Power-down(DPD) mode

OPTIONS

- Configuration: 64Mb (4 megabit x 16)

- Vcc core / VccQ I/O voltage supply: 1.8V

- Timing: 70ns access

- Frequency: 83 MHz, 104 MHz

- Standby current at 85°C

Low Low Power : 140

µA(max)

Low Power

: 160

µA(max)

Standard

: 180

µA(max)

- Operating temperature range:

Wireless -30°C to +85°C

EMC646SP16JS-85L Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc

EMC646SP16JS-85L Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc

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