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V54C3128804VBGA Datasheet(PDF) 9 Page - Mosel Vitelic, Corp |
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V54C3128804VBGA Datasheet(HTML) 9 Page - Mosel Vitelic, Corp |
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9 / 45 page ![]() MOSEL VITELIC V54C3128(16/80/40)4V(BGA) 9 V54C3128(16/80/40)4V(BGA) Rev. 1.2 September 2001 Address Input for Mode Set (Mode Register Operation) Similar to the page mode of conventional DRAM’s, burst read or write accesses on any col- umn address are possible once the RAS cycle latches the sense amplifiers. The maximum tRAS or the refresh interval time limits the number of random column accesses. A new burst access can be done even before the previous burst ends. The interrupt operation at every clock cycles is supported. When the previous burst is interrupted, the remaining ad- dresses are overridden by the new address with the full burst length. An interrupt which accompanies with an operation change from a read to a write is possible by exploiting DQM to avoid bus contention. When two or more banks are activated sequentially, interleaved bank read or write operations are possible. With the programmed burst length, alternate access and precharge operations on two or more banks can realize fast serial data access modes among many different pages. Once two or more banks are activated, column to column interleave operation can be done between different pages. A11 A3 A4 A2 A1 A0 A10 A9 A8 A7 A6 A5 Address Bus (Ax) BT Burst Length CAS Latency Mode Register CAS Latency A6 A5 A4 Latency 0 0 0 Reserve 0 0 1 Reserve 01 0 2 01 1 3 1 0 0 Reserve 1 0 1 Reserve 1 1 0 Reserve 1 1 1 Reserve Burst Length A2 A1 A0 Length Sequential Interleave 000 1 1 001 2 2 010 4 4 011 8 8 1 0 0 Reserve Reserve 1 0 1 Reserve Reserve 1 1 0 Reserve Reserve 1 1 1 Reserve Reserve Burst Type A3 Type 0 Sequential 1 Interleave Operation Mode BA1 BA0 A11 A10 A9 A8 A7 Mode 0 000 0 0 0 Burst Read/Burst Write 0 000 1 0 0 Burst Read/Single Write Operation Mode BA0 BA1 |
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