V54C365164VC datasheet(1/54 Pages) MOSEL

Part #	V54C365164VC

Description	HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16

PDF	54 Pages

Scroll/Zoom	100%

Manufacturer	MOSEL [Mosel Vitelic, Corp]

Direct Link	http://www.moselvitelic.com

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MOSEL VITELIC

1

V54C365164VC

HIGH PERFORMANCE 166/143/125 MHz

3.3 VOLT 4M X 16 SYNCHRONOUS DRAM

4 BANKS X 1Mbit X 16

V54C365164VC Rev. 0.8 July 2001

PRELIMINARY

6

7

8PC

System Frequency (fCK)

166 MHz

143 MHz

125 MHz

Clock Cycle Time (tCK3)

6 ns

7 ns

8 ns

Clock Access Time (tAC3) CAS Latency = 3

5.4 ns

6 ns

Clock Access Time (tAC2) CAS Latency = 2

5.5 ns

6 ns

Clock Access Time (tAC1) CAS Latency = 1

13 ns

Features

I 4 banks x 1Mbit x 16 organization

I High speed data transfer rates up to 166 MHz

I Full Synchronous Dynamic RAM, with all signals

referenced to clock rising edge

I Single Pulsed RAS Interface

I Data Mask for byte Control

I Four Banks controlled by BA0 & BA1

I Programmable CAS Latency: 1, 2, & 3

I Programmable Wrap Sequence: Sequential or

Interleave

I Programmable Burst Length:

1, 2, 4, 8 and full page for Sequential Type

1, 2, 4, 8 for Interleave Type

I Multiple Burst Read with Single Write Operation

I Automatic and Controlled Precharge Command

I Random Column Address every CLK (1-N Rule)

I Suspend Mode and Power Down Mode

I Auto Refresh and Self Refresh

I Refresh Interval: 4096 cycles/64 ms

I Available in 54 Pin 400 mil TSOP-II

I LVTTL Interface

I Single +3.3 V ±0.3 V Power Supply

Description

The V54C365164VC is a four bank Synchronous

DRAM organized as 4 banks x 1Mbit x 16. The

V54C365164VC achieves high speed data transfer

rates up to 166 MHz by employing a chip architec-

ture that prefetches multiple bits and then synchro-

nizes the output data to a system clock

All of the control, address, data input and output

circuits are synchronized with the positive edge of

an externally supplied clock.

Operating the four memory banks in an inter-

leaved fashion allows random access operation to

occur at higher rate than is possible with standard

DRAMs. A sequential and gapless data rate of up to

166 MHz is possible depending on burst length,

CAS latency and speed grade of the device.

Device Usage Chart

Operating

Temperature

Range

Package Outline

Access Time (ns)

Power

Temperature

Mark

T

6

7

8PC

Std.

L

0

°C to 70°C

•

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V54C365164VC Datasheet(PDF) 1 Page - Mosel Vitelic, Corp

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