STG3P2M10N60B datasheet(6/12 Pages) STMICROELECTRONICS

Part #	STG3P2M10N60B

Description	1-Phase bridge rectifier 3 phase inverter IGBT - SEMITOP 2 module

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 12 page

Electrical characteristics

STG3P2M10N60B

6/12

Table 7.

Collector-emitter diode

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

Forward on-voltage

If = 3.5A

If = 3.5A, TS = 125°C

1.3

1.1

1.9

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Softness factor of the diode

If = 7A ,VR = 40V,

TS = 25°C, di/dt = 100 A/µs

(see Figure 6)

2.1

0.68

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Softness factor of the diode

If = 7A ,VR = 40V,

TS =125°C, di/dt = 100A/µs

(see Figure 6)

3.2

0.79

Table 8.

Bridge rectifier diode

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

Forward on-voltage

If=20A, TS=125°C

1.1

Rth(j-s)

Thermal resistance

junction-sink(1)

Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm

2.15

K/W

Operating junction

temperature

-40

150

°C

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