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STG3P2M10N60B Datasheet(PDF) 3 Page - STMicroelectronics |
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STG3P2M10N60B Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STG3P2M10N60B Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC (1) 1. Calculated value Collector current (continuous) at Ts = 25°C 19 A IC (1) Collector current (continuous) at Ts = 80°C 10 A VGE Gate-emitter Voltage ±20 V ICM (2) 2. Pulse width limited by max. junction temperature TP<1ms; Ts=25°C 38 A ICM TP<1ms; Ts=80°C 20 A IF Diode RMS forward current at Ts = 25°C 19 A PTOT Total dissipation at Ts = 25°C 56 W VISO Insulation withstand voltage A.C. (t=1min/sec; Ts=25°C) 2500/3000 V Tstg Storage temperature – 40 to 125 °C Tj Operating junction temperature – 40 to 150 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rth(j-s) Thermal resistance junction-sink(1) Max. 1. Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm 2.2 K/W |
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