STPS30L30CT/CG/CR

2/5

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

Reverse leakage cur-

rent

Tj = 25°C

1.5

mA

Tj = 125°C

170

350

mA

Forward voltage drop

Tj = 25°C

0.46

V

Tj = 125°C

0.33

0.37

Tj = 25°C

0.57

Tj = 125°C

0.43

0.5

Pulse test : * tp = 380 µs,

δ <2%

To evaluate the conduction losses use the following equation :

2

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

1.5

0.8

°C/W

Coupling

0.1

°C/W

THERMAL RESISTANCE

When the diodes 1 and 2 are used simultaneously :

0

2

4

6

8

101214161820

0

1

2

3

4

5

6

7

8

9

10

IF(av) (A)

PF(av)(W)

T

tp

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

0

25

50

75

100

125

150

0

2

4

6

8

10

12

14

16

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

Rth(j-a)=50°C/W

T

tp

Tamb(°C)

Fig.

2:

Average

current

versus

ambient

temperature (

δ=0.5) (per diode).

0

0.2

0.4

0.6

0.8

1

1.2

0

25

50

75

100

125

150

T (°C)

j

P(t )

P

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(t )

P

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.