STPS30L30CT datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STPS30L30CT/CG/CR

3/5

1E-3

1E-2

1E-1

1E+0

100

125

150

175

200

225

250

IM(A)

Tc=25°C

Tc=110°C

Tc=75°C

t(s)

δ=0.5

Fig. 4: Non repetitive surge peak forward current

versus overload duration (maximum values) (per

diode).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 5: Relative variation of thermal transient

impedance junction to case versus pulse duration.

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

VR(V)

IR(mA)

Tj=125°C

Tj=25°C

Tj=150°C

Fig. 6: Reverse leakage current versus reverse

voltage applied (typical values) (per diode).

0.1

1.0

5.0

VR(V)

C(nF)

F=1MHz

Tj=25°C

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values) (per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

200

VFM(V)

IFM(A)

Tj=150°C

(typical values)

Tj=125°C

Tj=25°C

Fig. 8: Forward voltage drop versus forward

current (maximum values - per diode).

S(Cu) (cm²)

Rth(j-a) (°C/W)

Fig. 9: Thermal resistance junction to ambient

versus copper surface under tab (epoxy printed

circuit board FR4, e(Cu) = 35

µm)

(STPS30L30CG).

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