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2SJ451 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SJ451 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page  REJ03G864-0400 Rev.4.00 Sep 07, 2007 Page 1 of 6 2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Source 2. Gate 3. Drain D S G 1 2 3 Note: Marking is “ZK–”. Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –20 V Gate to source voltage VGSS ±20 V Drain current ID –0.2 A Drain peak current ID (pulse) Note 1 –0.4 A Channel dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% |
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