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2SJ451 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SJ451
Description  Silicon P Channel MOS FET
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ451 Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SJ451
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 3 of 6
Main Characteristics
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–0.20
0
–0.04
–0.08
–0.12
–0.16
0–2
–4
–6
–8
–10
–0.20
0
–0.04
–0.08
–0.12
–0.16
0–1
–2
–3
–4
–5
Tc = 75°C
25°C
–25°C
200
0
50
100
150
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–4 V
–2.5 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–0.3
–0.1
–0.03
–0.003
–0.01
–0.001
–0.1
–0.3
–1
–3
–10
–30
–100
–1
Ta = 25°C
1 ms
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–2
–4
–6
–8
–10
Pulse Test
ID = –0.2 A
–0.05 A
–0.1 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
20
10
2
5
1
–0.05
–0.2
–0.5
–0.01
–0.1
–1
–0.02
100
50
VGS = –2.5 V
–4 V
Pulse Test



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