Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

HAT2210R Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # HAT2210R
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2210R Datasheet(HTML) 7 Page - Renesas Technology Corp

Back Button HAT2210R Datasheet HTML 3Page - Renesas Technology Corp HAT2210R Datasheet HTML 4Page - Renesas Technology Corp HAT2210R Datasheet HTML 5Page - Renesas Technology Corp HAT2210R Datasheet HTML 6Page - Renesas Technology Corp HAT2210R Datasheet HTML 7Page - Renesas Technology Corp HAT2210R Datasheet HTML 8Page - Renesas Technology Corp HAT2210R Datasheet HTML 9Page - Renesas Technology Corp HAT2210R Datasheet HTML 10Page - Renesas Technology Corp HAT2210R Datasheet HTML 11Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 12 page
background image
HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 7 of 11
• MOS2 & Schottky Barrier Diode
4.0
3.0
2.0
1.0
0
50
100
150
200
100
10
1
110
100
20
10
05
10
20
10
0
24
68
10
0.1
1000
VGS = 2.4 V
Tc = 75
°C
25
°C
−25°C
Ambient Temperature
Ta (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS
(V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS
(V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
2.8 V
3.0 V
2.6 V
4.5 V
10 V
0.1
0.01
100
µs
1 ms
PW
=
10
ms
(1shot)
Ta = 25
°C
1 shot Pulse
10
µs
Note
5
DC
Opera
tion
(PW
≤ 10
s)
Operation in
this area is
limited by RDS(on)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
200
150
100
50
0
24
6
812
10
0.1
1
10
10
1
ID = 5 A
2 A
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
Pulse Test
1 A
100
100
VGS = 4.5 V
10 V



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com