HAT2210R datasheet(2/12 Pages) RENESAS

2 / 12 page

HAT2210R, HAT2210RJ

Rev.3.00, Mar.15.2005, page 2 of 11

Electrical Characteristics

• MOS1

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

µA

VDS = 30 V, VGS = 0

HAT2210R

IDSS

—

µA

Zero gate voltage

drain current

HAT2210RJ

IDSS

—

µA

VDS = 24 V, VGS = 0,

Ta = 125

°C

Gate to source cutoff voltage

VGS(off)

1.0

—

2.5

VDS = 10 V, ID = 1 mA

RDS(on)

—

Ω

ID = 3.75 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

Ω

ID = 3.75 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

ID = 3.75 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

630

—

Output capacitance

Coss

—

155

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0,

f = 1MHz

Total gate charge

—

4.6

—

Gate to source charge

Qgs

—

2.2

—

Gate to drain charge

Qgd

—

1.2

—

VDD = 10 V, VGS = 4.5 V,

ID = 7.5 A

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

3.4

—

VGS =10 V, ID = 3.75 A,

VDD

≈ 10 V, RL = 2.66 Ω,

Rg = 4.7

Ω

Body–drain diode forward voltage

VDF

—

0.85

1.11

IF = 7.5 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

IF =7.5 A, VGS = 0

diF/ dt = 100 A/

µs

Notes: 4. Pulse test

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