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VSKTF18012HKP Datasheet(PDF) 6 Page - Vishay Siliconix |
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VSKTF18012HKP Datasheet(HTML) 6 Page - Vishay Siliconix |
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6 / 9 page ![]() www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93685 6 Revision: 22-Apr-08 VSK.F180..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 H z 400 1000 50 00 15 0 2500 Pu lse Ba sew id th (µs) Snub b er c ircuit R = 10 ohm s C = 0.47 µF V = 80% V tp 1E4 Sinuso id a l p ulse DR M s s D VSK .F1 80.. Se rie s T = 85 °C C 1E1 1E2 1E3 1E4 50 H z 40 0 1000 500 0 15 0 250 0 Pu lse Ba sew id th (µs) Sinusoid a l pulse T = 60 °C Snub b e r c irc uit R = 10 ohm s C = 0.47 µF V = 80% V 1E1 tp C DRM s s D VSK .F 180.. Serie s 1E1 1E2 1E3 1E4 1E11E2 1E31E4 50 H z 40 0 10 00 5000 150 250 0 Snub b e r circuit R = 10 ohm s C = 0.47 µF V = 80% V Pu lse Base w id th (µs) tp 1E4 VSK .F180.. Serie s DR M s s D Tra p ezo id a l p ulse T = 8 5 °C d i/d t 50A /µs C E1 1E2 1E3 1E4 50 H z 400 10 00 500 0 150 250 0 Snub b er circuit R = 10 ohm s C = 0.47 µF V = 80% V Pulse Base w idth (µs) tp 1E1 DRM s s D VSK .F180.. Series Tra p ezoid a l p ulse T = 85 °C d i/d t 100A /µs C 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 H z 40 0 1000 5000 150 250 0 Pulse Basewidth (µs) Snub b er circuit R = 10 ohm s C = 0.47 µF V = 80% V tp 1E4 VSK .F1 80.. Se rie s Tra p e zoid a l p ulse T = 60 °C d i/d t 50A /µs C s s D DR M 1E1 1E2 1E3 1E4 50 H z 400 100 0 5000 15 0 250 0 Pu lse Ba se w idth (µs) VSK .F 180.. Se ries Tra p ezoid a l p ulse T = 60 °C d i/d t 100A /µs Snub b e r circuit R = 10 ohm s C = 0.47 µF V = 80% V tp DR M C s s D |
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