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2N3055H Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N3055H
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N3055H Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N3055H Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N3055H Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
2N3055H
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=200mA ; IB=0
100
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC=200mA ; RBE=100Ω
70
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 3.3A
3.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A ; VCE= 4V
1.5
V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
0.7
mA
ICEX
Collector Cutoff Current
VCE= 100V; VBE(off)= 1.5V
VCE= 100V; VBE(off)= 1.5V,TC=150℃
1.0
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC=0
5.0
mA
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
20
70
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
5.0
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 40V,t= 1.0s,Nonrepetitive
2.87
A
fT
Current Gain-Bandwidth Product
IC= 0.5A ; VCE= 10V;f=1.0MHz
2.5
MHz



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