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2SB552 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB552 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB552 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -2.0 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -2.5 V ICBO Collector cut-off current VCB=-220V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-5V 25 80 COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 300 pF fT Transition frequency IC=-1A ; VCE=-10V 3.5 MHz |
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