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2SB552 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB552 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION ·With TO-3 package ·Complement to type 2SD552 APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -220 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~200 ℃ Fig.1 simplified outline (TO-3) and symbol |
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