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BD800 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD800 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD800 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Saturation Voltage ·Complement to Type BD799 APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB B Base Current-Continuous -3 A PC Collector Power Dissipation TC=25℃ 65 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W isc Website:www.iscsemi.cn |
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