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2N3906 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2N3906 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page  Elektronische Bauelemente 2N3906 PNP Silicon General Purpose Transistor TYPICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit 3 V 275 10 k CS < 4 pF* 3 V 275 10 k CS < 4 pF* < 1 ns +0.5 V 10.6 V 300 ns DUTY CYCLE = 2% < 1 ns +9.1 V 10.9 V DUTY CYCLE = 2% t1 0 10 < t1 < 500 ms * Total shunt capacitance of test jig and connectors DC Current Gain IC, COLLECTOR CURRENT (mA) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 VCE = 1.0 V TJ = +125°C +25°C -55°C 01-Jun-2002 Rev. A Page 2 of 3 |
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