2N3906 datasheet(3/3 Pages) SECOS

Part #	2N3906

Description	PNP Silicon General Purpose Transistor

PDF	3 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

2N3906

PNP Silicon

General Purpose Transistor

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

0.5

2.0

3.0

0.2

0.3

1.0

0.7

5.0

7.0

IC = 1.0 mA

TJ = 25°C

0.07

0.05

0.03

0.02

0.01

10 mA

30 mA

100 mA

“ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

100

-0.5

0.5

1.0

120 140

160 180

100

200

-1.0

-1.5

-2.0

200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

01-Jun-2002 Rev. A

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