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APT84F50B2 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APT84F50B2
Description  N-Channel FREDFET
PDF  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT84F50B2 Datasheet(HTML) 1 Page - Microsemi Corporation

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T-MaxTM
TO-264
N-Channel FREDFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Ratings
84
53
270
±30
1845
42
Min
Typ
Max
1135
0.11
0.11
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
R
θJC
R
θCS
T
J,TSTG
T
L
W
T
Torque
TYPICAL APPLICATIONS
• ZVSphaseshiftedandotherfullbridge
•Halfbridge
•PFCandotherboostconverter
• Buckconverter
•Singleandtwoswitchforward
•Flyback
FEATURES
•FastswitchingwithlowEMI
•Lowtrrforhighreliability
•UltralowCrssforimprovednoiseimmunity
•Lowgatecharge
•Avalancheenergyrated
•RoHScompliant
APT84F50B2
APT84F50L
500V,84A,0.065
ΩMax,trr ≤320ns
APT84F50B2
APT84F50L
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
MicrosemiWebsite-http://www.microsemi.com


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