APT84F50B2 datasheet(2/4 Pages) MICROSEMI

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Static Characteristics

TJ=25°Cunlessotherwisespecified

Dynamic Characteristics

TJ=25°Cunlessotherwisespecified

Source-Drain Diode Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

J = 25°C, L = 2.08mH, RG = 25Ω, IAS = 42A.

3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.

4 C

o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.

5 C

o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of

DS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10.

6 R

G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.

Unit

V/°C

Ω

mV/°C

µA

Unit

µC

V/ns

Min

Typ

Max

500

0.60

0.055

0.065

2.5

-10

250

1000

±100

Min

Typ

Max

13500

185

1455

845

425

340

155

Min

Typ

Max

270

1.0

282

320

499

600

1.67

4.36

17.8

Test Conditions

GS = 0V, ID = 250µA

Reference to 25°C, I

D = 250µA

GS = 10V, ID = 42A

GS = VDS, ID = 2.5mA

DS = 500V

J = 25°C

GS = 0V

J = 125°C

GS = ±30V

Test Conditions

DS = 50V, ID = 42A

GS = 0V, VDS = 25V

f = 1MHz

GS = 0V, VDS = 0V to 333V

GS = 0 to 10V, ID = 42A,

DS = 250V

ResistiveSwitching

DD = 333V, ID = 42A

G = 2.2Ω

, V

GG = 15V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

SD = 42A, TJ = 25°C, VGS = 0V

J = 25°C

J = 125°C

SD = 42A

J = 25°C

SD/dt = 100A/µs

J = 125°C

DD = 100V

J = 25°C

J = 125°C

SD ≤ 42A, di/dt ≤1000A/µs, VDD = 333V,

J = 125°C

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Drain-Source On Resistance 3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Symbol

BR(DSS)

∆V

BR(DSS)/∆TJ

DS(on)

GS(th)

∆V

GS(th)/∆TJ

DSS

GSS

Symbol

iss

rss

oss

o(cr)

o(er)

d(on)

d(off)

Symbol

rrm

dv/dt

APT84F50B2_L

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