Dynamic Characteristic

APT100GT60B2R_LR(G)

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

C

ies

Input Capacitance

V

f = 1MHz

-

5150

-

pF

C

oes

Output Capacitance

-

475

-

C

res

Reverse Transfer Capacitance

-

295

-

V

GEP

Gate-to-Emitter Plateau Voltage

Gate Charge

V

V

I

-

8.0

-

V

Q

g

-

460

-

nC

Q

ge

Gate-Emitter Charge

-

40

-

Q

gc

Gate-Collector Charge

-

210

-

SSOA

Switching Safe Operating Area

T

L = 100μH, V

300

A

t

d(on)

Turn-On Delay Time

Inductive Switching (25°C)

V

V

I

R

T

-40

-

ns

t

r

Current Rise Time

-

75

-

t

d(off)

Turn-Off Delay Time

-

320

-

t

f

Current Fall Time

-

100

-

E

on1

-

3250

-

μJ

E

on2

-

3525

-

E

off

-

3125

-

t

d(on)

Turn-On Delay Time

Inductive Switching (125°C)

V

V

I

R

T

-40

-

ns

t

r

Current Rise Time

-

75

-

t

d(off)

Turn-Off Delay Time

-

350

-

t

f

Current Fall Time

-

100

-

E

on1

-

3275

-

μJ

E

on2

-

4650

-

E

off

-

3750

-

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

R

θJC

Junction to Case (IGBT)

-

-

0.25

°C/W

R

θJC

Junction to Case (DIODE)

-

-

N/A

W

T

Package Weight

-

29.2

-

g

Torque

Terminals and Mounting Screws

-

-

10

in·lbf

-

-

1.1

N·m

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 E

loss. (See Figures 21, 22.)

6 E

7 R

Thermal and Mechanical Characteristics

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