BUV20

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS1

Collector–Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

VCEO(sus)

125

Vdc

Collector Cutoff Current at Reverse Bias

(VCE = 140 V, VBE = – 1.5 V)

(VCE = 140 V, VBE = – 1.5 V, TC = 125_C)

ICEX

3.0

12

mAdc

Collector–Emitter Cutoff Current

(VCE = 100 V)

ICEO

3.0

mAdc

Emitter–Base Reverse Voltage

(IE = 50 mA)

VEBO

7

V

Emitter–Cutoff Current

(VEB = 5 V)

IEBO

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

(VCE = 20 V, t = 1 s)

(VCE = 40 V, t = 1 s)

IS/b

12

1.5

Adc

ON CHARACTERISTICS1

DC Current Gain

(IC = 25 A, VCE = 2 V)

(IC = 50 A, VCE = 4 V)

hFE

20

10

60

Collector–Emitter Saturation Voltage

(IC = 25 A, IB = 2.5 A)

(IC = 50 A, IB = 5 A)

VCE(sat)

0.6

1.2

Vdc

Base–Emitter Saturation Voltage

(IC = 50 A, IB = 5 A)

VBE(sat)

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(VCE = 15 V, IC = 2 A, f = 4 MHz)

fT

8.0

MHz

SWITCHING CHARACTERISTICS (Resistive Load)

Turn–on Time

(IC = 50 A, IB1 = IB2 = 5 A,

VCC = 30 V, RC = 0.6 Ω)

ton

1.5

µs

Storage Time

(IC = 50 A, IB1 = IB2 = 5 A,

VCC = 30 V, RC = 0.6 Ω)

ts

1.2

Fall Time

VCC = 30 V, RC = 0.6 Ω)

tf

0.25

1 Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.