PIC18F2420-ESLASHP datasheet(339/412 Pages) MICROCHIP

339 / 412 page

DS39631E-page 337

PIC18F2420/2520/4420/4520

TABLE 26-1:

MEMORY PROGRAMMING REQUIREMENTS

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C

≤ TA ≤ +85°C for industrial

Param

No.

Sym

Characteristic

Min

Typ†

Max

Units

Conditions

Data EEPROM Memory

D120

Byte Endurance

100K

—

E/W -40

°C to +85°C

D121

VDRW VDD for Read/Write

VMIN

—

5.5

Using EECON to read/write

VMIN = Minimum operating

voltage

D122

TDEW Erase/Write Cycle Time

—

D123

TRETD Characteristic Retention

—

Year Provided no other

specifications are violated

D124

TREF

Number of Total Erase/Write

Cycles before Refresh(1)

10M

—

E/W -40°C to +85°C

D125

IDDP

Supply Current during

Programming

—10—

Program Flash Memory

D130

Cell Endurance

10K

100K

—

E/W -40

°C to +85°C

D131

VPR

VDD for Read

VMIN

—5.5

VMIN = Minimum operating

voltage

D132

VIE

VDD for Block Erase

3.0

—

5.5

Using ICSP™ port, +25

°C

D132A VIW

VDD for Externally Timed Erase

or Write

4.5

—

5.5

Using ICSP™ port, +25

°C

D132B VPEW VDD for Self-Timed Write

VMIN

—5.5

VMIN = Minimum operating

voltage

D133

TIE

ICSP Block Erase Cycle Time

—4—

VDD

≥ 4.5V

D133A TIW

ICSP Erase or Write Cycle Time

(externally timed)

1—

—

VDD

≥ 4.5V, +25°C

D133A TIW

Self-Timed Write Cycle Time

—

D134

TRETD Characteristic Retention

100

—

Year Provided no other

specifications are violated

D135

IDDP

Supply Current during

Programming

—10—

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1:

Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM

endurance.

PIC18F2420-E/P Datasheet(PDF) 339 Page - Microchip Technology

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