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EDD51163DBH-LS Datasheet(PDF) 11 Page - Elpida Memory |
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EDD51163DBH-LS Datasheet(HTML) 11 Page - Elpida Memory |
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11 / 60 page ![]() EDD51163DBH-LS Preliminary Data Sheet E1433E30 (Ver. 3.0) 11 Timing Parameter Measured in Clock Cycle Number of clock cycle tCK 5.0ns 6.0ns 7.5ns Parameter Symbol min. max. min. max. min. max. Unit Write to pre-charge command delay (same bank) tWPD 4 + BL/2 4 + BL/2 3 + BL/2 tCK Read to pre-charge command delay (same bank) tRPD BL/2 BL/2 BL/2 tCK Write to read command delay (to input all data) tWRD 3 + BL/2 2 + BL/2 2 + BL/2 tCK Burst stop command to write command delay (CL = 3) tBSTW 3 3 3 tCK Burst stop command to DQ high-Z (CL = 3) tBSTZ 3 3 3 tCK Read command to write command delay (to output all data) (CL = 3) tRWD 3 + BL/2 3 + BL/2 3 + BL/2 tCK Pre-charge command to high-Z (CL = 3) tHZP 3 3 3 tCK Write command to data in latency tWCD 1 1 1 tCK Write recovery tWR 3 3 2 tCK DM to data in latency tDMD 0 0 0 tCK Mode register set command cycle time tMRD 2 2 2 tCK Self-refresh exit to non-column command tSREX 24 20 16 tCK Auto-refresh period tRFC 15 12 10 tCK Power-down entry tPDEN 2 2 1 tCK Power-down exit to command input tPDEX 1 1 1 tCK CKE minimum pulse width tCKE 2 2 2 tCK |
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