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56F8167 Datasheet(PDF) 147 Page - Freescale Semiconductor, Inc |
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56F8167 Datasheet(HTML) 147 Page - Freescale Semiconductor, Inc |
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147 / 182 page ![]() Flash Memory Characteristics 56F8367 Technical Data, Rev. 9 Freescale Semiconductor 147 Preliminary Figure 10-3 Signal States 10.4 Flash Memory Characteristics 10.5 External Clock Operation Timing Table 10-12 Flash Timing Parameters Characteristic Symbol Min Typ Max Unit Program time1 1. There is additional overhead which is part of the programming sequence. See the 56F8300 Peripheral User Manual for details. Program time is per 16-bit word in Flash memory. Two words at a time can be programmed within the Pro- gram Flash Module, as it contains two interleaved memories. Tprog 20 — — μs Erase time2 2. Specifies page erase time. There are 512 bytes per page in the Data and Boot Flash memories. The Program Flash Module uses two interleaved Flash memories, increasing the effective page size to 1024 bytes. Terase 20 — — ms Mass erase time Tme 100 — — ms Table 10-13 External Clock Operation Timing Requirements1 1. Parameters listed are guaranteed by design. Characteristic Symbol Min Typ Max Unit Frequency of operation (external clock driver)2 2. See Figure 10-4 for details on using the recommended connection of an external clock driver. fosc 0— 120 MHz Clock Pulse Width3 3. The high or low pulse width must be no smaller than 8.0ns or the chip will not function. tPW 3.0 — — ns External clock input rise time4 4. External clock input rise time is measured from 10% to 90%. trise — — 10 ns External clock input fall time5 5. External clock input fall time is measured from 90% to 10%. tfall — — 10 ns Data Invalid State Data1 Data2 Valid Data Tri-stated Data3 Valid Data2 Data3 Data1 Valid Data Active Data Active |
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