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H7N1002LS Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # H7N1002LS
Description  Silicon N Channel MOS FET High Speed Power Switching
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N1002LS Datasheet(HTML) 1 Page - Renesas Technology Corp

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REJ03G1131-0800 Rev.8.00 Nov 13, 2009
Page 1 of 8
Preliminary
H7N1002LD, H7N1002LS, H7N1002LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1131-0800
Rev.8.00
Nov 13, 2009
Features
• Low on-resistance
RDS (on) = 8 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
1
2
3
4
1
2
3
4
1
2
3
4
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L)
: PRSS0004AE-B
: LDPAK (S)-(1) )
: PRSS0004AE-C
: LDPAK (S)-(2) )
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
H7N1002LD
H7N1002LS
H7N1002LM
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
75
A
Drain peak current
ID (pulse)
Note 1
300
A
Body to drain diode reverse drain current
IDR
75
A
Avalanche current
IAP
Note 3
50
A
Avalanche energy
EAR
Note 3
166
mJ
Channel dissipation
Pch
Note 2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω


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