RJK03C2DPB datasheet(1/7 Pages) RENESAS

Part #	RJK03C2DPB

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

PDF	7 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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REJ03G1831-0200 Rev.2.00 Sep 29, 2009

Page 1 of 6

Preliminary

RJK03C2DPB

Silicon N Channel Power MOS FET with Schottky Barrier Diode

Power Switching

REJ03G1831-0200

Rev.2.00

Sep 29, 2009

Features

• High speed switching

• Capable of 4.5 V gate drive

• Low drive current

• High density mounting

• Low on-resistance

RDS(on) = 1.9 mΩ typ. (at VGS = 10 V)

• Pb-free

• Halogen-free

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

1, 2, 3

Source

4

Gate

5

Drain

1 2

3 4

5

G

D

SS S

DD D

4

12 3

56 7 8

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

30

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

55

A

Drain peak current

ID(pulse)

Note1

220

A

Body-drain diode reverse drain current

IDR

55

A

Avalanche current

IAP

Note 2

25

A

Avalanche energy

EAR

Note 2

62.5

mJ

Channel dissipation

Pch

Note3

60

W

Channel to Case Thermal Resistance

θch-C

2.09

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 μs, duty cycle ≤ 1%

2. Value at Tch = 25

°C, Rg ≥ 50 Ω

3. Tc = 25

°C

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