RJK03C2DPB datasheet(2/7 Pages) RENESAS

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RJK03C2DPB

Preliminary

REJ03G1831-0200 Rev.2.00 Sep 29, 2009

Page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.5

μA

VGS = ±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

m A

VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

VDS = 10 V, ID = 1 mA

RDS(on)

—

1.9

2.5

ID = 27.5 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

2.5

3.5

ID = 27.5 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

115

—

ID = 27.5 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

4900

—

Output capacitance

Coss

—

1050

—

Reverse transfer capacitance

Crss

—

420

—

VDS = 10 V, VGS = 0,

f = 1 MHz

Gate Resistance

—

0.5

—

Total gate charge

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

VDD = 10 V, VGS = 4.5 V,

ID = 55 A

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

VGS = 10 V, ID = 27.5 A,

VDD ≅ 10 V, RL = 0.36 Ω,

Rg = 4.7

Body–drain diode forward voltage

VDF

—

0.39

—

IF = 2 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

IF = 55 A, VGS = 0

diF/ dt = 100 A/ μs

Notes: 4. Pulse test

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