IXZ4DF12N100

RF Power MOSFET & DRIVER

Driver / MOSFET Combination

DEIC-515 Driver combined with a DE375-102N12A MOSFET

Gate driver matched to MOSFET

Figure 1.

Functional Diagram

Applications

• Class D or E Switching

Amplifier

• Multi MHz Switch Mode

Power Supplies (SMPS)

Features

• Isolated Substrate

−

high isolation voltage (>2500V)

−

excellent thermal transfer

−

Increased temperature and power cycling capability

• IXYS advanced Z-MOS process

•

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other hazardous materials

• Built using the advantages and compatibility of CMOS and IXYS

HDMOS™ processes

• Latch-Up Protected

• Low Quiescent Supply Current

Advantages

• Optimized for RF and high speed

• Easy to mount—no insulators needed

• High power density

• Single package reduces size and heat sink area

Description

The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically

designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in

pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and

minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating

range. Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where

combiners are used. Its features and wide safety margin in operating voltage and power make the

IXZ4DF12N100 unmatched in performance and value.

The IXZ4DF12N100 is packaged in DEIs low inductance RF package incorporating DEI's RF layout techniques

to minimize stray lead inductances for optimum switching performance. The IXZ4DF12N100 is a surface-

mountable device.

1000 Volts

12 A

0.7 Ohms