ECH8901

No. A1472-2/6

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Allowable Power Dissipation

PD

1.3

W

Total Dissipation

PT

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

[TR]

Collector Cutoff Current

ICBO

VCB= --30V, IE=0A

--0.1

μA

Emitter Cutoff Current

IEBO

VEB= --4V, IC=0A

--0.1

μA

IECO

VEC= --4.5V, IB=0A

--1

μA

DC Current Gain

hFE

VCE= --2V, IC= --500mA

200

560

Gain-Bandwidth Product

fT

VCE= --10V, IC= --500mA

380

MHz

Output Capacitance

Cob

VCB= --10V, f=1MHz

25

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)1

IC= --1.5A, IB= --30mA

--140

--200

mV

VCE(sat)2

IC= --1.5A, IB= --75mA

--90

--135

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC= --1.5A, IB= --30mA

--0.83

--1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC= --10μA, IE=0A

--30

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC= --1mA, RBE=∞

--30

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE= --10μA, IC=0A

--5

V

Turn-On Time

ton

See specified Test Circuit.

50

ns

Storage Time

tstg

See specified Test Circuit.

270

ns

Fall Time

tf

See specified Test Circuit.

25

ns

[FET]

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--12

V

Zero-Gate Voltage Drain Current

IDSS1VDS=--8V, VGS=0V

--1

μA

IDSS2VDS=--12V, VGS=0V

--10

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--6V, ID=--1mA

--0.4

--1.4

V

Forward Transfer Admittance

| yfs |

VDS=--6V, ID=--3A

6.6

11

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--3A, VGS=--4.5V

21

28

mΩ

RDS(on)2

ID=--1.5A, VGS=--2.5V

31

45

mΩ

RDS(on)3

ID=--0.5A, VGS=--1.8V

49

78

mΩ

Input Capacitance

Ciss

VDS=--6V, f=1MHz

1000

pF

Output Capacitance

Coss

VDS=--6V, f=1MHz

320

pF

Reverse Transfer Capacitance

Crss

VDS=--6V, f=1MHz

250

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

11

ns

Rise Time

tr

See specified Test Circuit.

72

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

105

ns

Fall Time

tf

See specified Test Circuit.

87

ns

Total Gate Charge

Qg

VDS=--6V, VGS=--4.5V, ID=--6A

11

nC

Gate-to-Source Charge

Qgs

VDS=--6V, VGS=--4.5V, ID=--6A

1.5

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=--6V, VGS=--4.5V, ID=--6A

2.9

nC

Diode Forward Voltage

VSD

IS=--6A, VGS=0V

--0.81

--1.2

V

Note : The specifications shown above are for each individual transistor.