ECH8901

No. A1472-6/6

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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

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PS

This catalog provides information as of February, 2010. Specifications and information herein are subject

to change without notice.

Note on usage : Since the ECH8901 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Ambient Temperature, Ta --

°C

PD -- Ta

A S O

Drain-to-Source Voltage, VDS -- V

Total Gate Charge, Qg -- nC

VGS -- Qg

012345678

10

911

12

0

--0.5

--1.0

--1.5

--2.0

--2.5

--3.0

--3.5

--4.0

--4.5

IT12955

IT12956

IT12957

VDS= --6V

ID= --6A

2

2

3

5

7

--0.1

2

3

5

7

--1.0

0

0

20

40

0.4

60

80

100

120

140

160

1.0

1.4

1.5

1.3

1.8

0.2

0.8

0.6

1.2

1.6

--0.01

--0.01

--0.1

57

23

23

2

--1.0

57

32

Operation in this

area is limited by RDS(on).

100ms

DC

operation

(T

a=25

10ms

1ms

IDP= --40A

ID= --6A

1unit

2

3

5

7

--10

3

5

7

--100

--10

57

3

Ta=25

Single pulse

×0.8mm) 1unit

Total

Dissipation

When mounted on ceramic substrate

×0.8mm)

PW

≤10μs