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TSM2N7002KCXRF Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSM2N7002KCXRF
Description  60V N-Channel MOSFET
PDF  7 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM2N7002KCXRF Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM2N7002K
60V N-Channel MOSFET
2/7
Version: B09
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS =0V, ID =250µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS =VGS, ID =250µA
VGS(TH)
1.0
1.5
2.5
V
Gate Body Leakage
VGS =±20V, VDS =0V
IGSS
--
--
±10
uA
Zero Gate Voltage Drain Current
VDS =60V, VGS =0V
IDSS
--
--
1.0
uA
VGS =10V, ID =300mA
--
1.2
2
Drain-Source On-State Resistance
VGS =4.5V, ID =100mA
RDS(ON)
--
2
4
Ω
Forward Transconductance
VDS =10V, ID =200mA
gfs
100
--
--
mS
Diode Forward Voltage
IS =300mA, VGS =0V
VSD
--
0.8
1.4
V
Dynamic
b
Total Gate Charge
VDS =10V, ID = 250mA,
VGS =4.5V
Qg
--
0.4
0.6
nC
Input Capacitance
Ciss
--
30
--
Output Capacitance
Coss
--
6
--
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Crss
--
2.5
--
pF
Switching
c
Turn-On Delay Time
td(on)
--
--
25
Turn-Off Delay Time
VDD =30V, RG =10Ω
ID =200mA, VGEN =10V,
td(off)
--
--
35
nS
Notes:
a. pulse test: PW
≤300µS,dutycycle≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.



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