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APTC60DHM35T3G Datasheet(PDF) 7 Page - Microsemi Corporation

Part # APTC60DHM35T3G
Description  Asymmetrical bridge Super Junction MOSFET Power Module
PDF  7 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC60DHM35T3G Datasheet(HTML) 7 Page - Microsemi Corporation

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APTC60DHM35T3G
www.microsemi.com
7- 7
Typical diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
40
80
120
160
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF, Anode to Cathode Voltage (V)
Forward Current vs Forward Voltage
IRRM vs. Current Rate of Charge
30 A
60 A
120 A
0
5
10
15
20
25
30
35
40
0
200
400
600
800 1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=400V
Trr vs. Current Rate of Charge
30 A
60 A
120 A
50
75
100
125
150
175
0
200
400
600
800 1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=400V
QRR vs. Current Rate Charge
30 A
60 A
120 A
0.0
0.5
1.0
1.5
2.0
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=400V
Capacitance vs. Reverse Voltage
0
100
200
300
400
500
1
10
100
1000
VR, Reverse Voltage (V)
0
20
40
60
80
100
25
50
75
100
125
150
175
Case Temperature (°C)
DC Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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