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APTC60DHM35T3G Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTC60DHM35T3G
Description  Asymmetrical bridge Super Junction MOSFET Power Module
PDF  7 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC60DHM35T3G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTC60DHM35T3G
www.microsemi.com
1- 7
32
4
16
Q4
CR3
3
13
R1
31
7
14
8
19
30
29
22
Q1
18
CR2
23
15
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
72
ID
Continuous Drain Current
Tc = 80°C
54
IDM
Pulsed Drain current
200
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
35
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
416
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
VDSS = 600V
RDSon = 35mΩ max @ Tj = 25°C
ID = 72A @ Tc = 25°C
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
Features
•
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
•
Kelvin source for easy drive
•
Very low stray inductance
-
Symmetrical design
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
RoHS Compliant
Asymmetrical bridge
Super Junction MOSFET
Power Module


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