APTM100H80FT1G

www.microsemi.com

1 – 5

79

1

4

NTC

11

810

12

3

6

Q1

Q2

5

Q4

Q3

2

Pins 3/4 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

1000

V

11

Continuous Drain Current

8

Pulsed Drain current

68

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

960

m

Ω

Maximum Power Dissipation

208

W

Avalanche current (repetitive and non repetitive)

9

A

Application

•

Welding converters

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

•

Motor control

Features

•

Power MOS 8™ Fast FREDFETs

-

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Very low stray inductance

-

Symmetrical design

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

•

RoHS Compliant

Full - Bridge

MOSFET Power Module