APTM100H80FT1G datasheet(2/5 Pages) MICROSEMI

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APTM100H80FT1G

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Tj = 25°C

250

IDSS

Zero Gate Voltage Drain Current

VDS = 1000V

VGS = 0V

Tj = 125°C

1000

µA

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 9A

800

960

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 1mA

IGSS

Gate – Source Leakage Current

VGS = ±30 V

±100

Dynamic Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

3876

Coss

Output Capacitance

405

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

Total gate Charge

150

Qgs

Gate – Source Charge

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 500V

ID = 9A

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

105

Fall Time

Resistive switching @ 25°C

VGS = 15V

VBus = 667V

ID = 9A

RG = 4.7Ω

Source - Drain diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

Continuous Source current

(Body diode)

Tc = 80°C

VSD

Diode Forward Voltage

VGS = 0V, IS = - 9A

dv/dt

Peak Diode Recovery

V/ns

Tj = 25°C

245

trr

Reverse Recovery Time

Tj = 125°C

465

Tj = 25°C

1.02

Qrr

Reverse Recovery Charge

IS = - 9A

VR = 100V

diS/dt = 100A/µs

Tj = 125°C

2.57

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 9A

di/dt

≤ 1000A/µs

VDD ≤ 400V

Tj ≤ 125°C

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