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HFP640 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd.

Part # HFP640
Description  200V N-Channel MOSFET
PDF  8 Pages
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Manufacturer  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

HFP640 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A0,July 2005
2
1
3
BVDSS = 200 V
RDS(on) typ = 0.145Ω
ID = 18 A
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 37 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V
100% Avalanche Tested
Thermal Resistance Characteristics
FEATURES
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
TO-220
1.Gate 2. Drain 3. Source
HFP640
200V N-Channel MOSFET
Symbol
Parameter
Value
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current
– Continuous (TC = 25℃)
18
A
Drain Current
– Continuous (TC = 100℃)
11.4
A
IDM
Drain Current
– Pulsed
(Note 1)
72
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
250
mJ
IAR
Avalanche Current
(Note 1)
18
A
EAR
Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25℃)
- Derate above 25℃
139
W
1.11
W/℃
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
℃
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
--
0.9
℃/W
RθCS
Case-to-Sink
0.5
--
RθJA
Junction-to-Ambient
--
62.5
July 2005


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