Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

HFP640 Datasheet(PDF) 2 Page - SemiHow Co.,Ltd.

Part # HFP640
Description  200V N-Channel MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

HFP640 Datasheet(HTML) 2 Page - SemiHow Co.,Ltd.

  HFP640 Datasheet HTML 1Page - SemiHow Co.,Ltd. HFP640 Datasheet HTML 2Page - SemiHow Co.,Ltd. HFP640 Datasheet HTML 3Page - SemiHow Co.,Ltd. HFP640 Datasheet HTML 4Page - SemiHow Co.,Ltd. HFP640 Datasheet HTML 5Page - SemiHow Co.,Ltd. HFP640 Datasheet HTML 6Page - SemiHow Co.,Ltd. HFP640 Datasheet HTML 7Page - SemiHow Co.,Ltd. HFP640 Datasheet HTML 8Page - SemiHow Co.,Ltd.  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
◎ SEMIHOW REV.A0,July 2005
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1.16mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤18A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Electrical Characteristics T
C=25 °C unless otherwise specified
IS
Continuous Source-Drain Diode Forward Current
--
--
18
A
ISM
Pulsed Source-Drain Diode Forward Current
--
--
72
VSD
Source-Drain Diode Forward Voltage IS = 18 A, VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
IS = 18 A, VGS = 0 V
diF/dt = 100 A/μs
(Note 4)
--
200
--
Qrr
Reverse Recovery Charge
--
1.50
--
μC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VGS
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
--
4.0
V
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9.0 A
--
0.145
0.18
On Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂
200
--
--
V
Δ
BVDSS
/ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 ㎂, Referenced to25℃
--
0.2
--
V/℃
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
--
--
1
VDS = 160 V, TC = 125℃
--
--
10
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Off Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1300
1700
Coss
Output Capacitance
--
175
230
Crss
Reverse Transfer Capacitance
--
26
34
Dynamic Characteristics
td(on)
Turn-On Time
VDS = 100 V, ID = 18 A,
RG = 25 Ω
(Note 4,5)
--
20
40
tr
Turn-On Rise Time
--
150
300
td(off)
Turn-Off Delay Time
--
150
300
tf
Turn-Off Fall Time
--
110
220
Qg
Total Gate Charge
VDS = 160 V, ID = 18 A,
VGS = 10 V
(Note 4,5)
--
37
48
nC
Qgs
Gate-Source Charge
--
5.5
--
nC
Qgd
Gate-Drain Charge
--
13
--
nC
Switching Characteristics
Source-Drain Diode Maximum Ratings and Characteristics



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com