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N-channel Enhancement-mode Power MOSFET

60V

2

Ω

640mA

The SSM7002KGEN acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

ABSOLUTE MAXIMUM RATINGS

W/°C

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-ambient

3

90

°C/W

Symbol

Parameter

Value

Units

Drain-source voltage

60

V

Gate-source voltage

Continuous drain current

3

,

640

mA

500

mA

Pulsed drain current

1,2

950

mA

Operating junction temperature range

-55 to 150

°C

Linear derating factor

0.01

Storage temperature range

Total power dissipation

1.38

W

-55 to 150

°C

THERMAL CHARACTERISTICS

± 20

V

Pb-free; RoHS-compliant SOT-23-3

PRODUCT SUMMARY

DESCRIPTION

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board ; 270°C/W when mounted on the minimum pad area required for soldering.

converters and general load-switching circuits.

The SSM7002KGEN is supplied in an RoHS-compliant

SOT-23-3 package, which is widely used for lower

power commercial and industrial surface mount

applications.

D

G

S

SOT-23-3

SSM7002KGEN

6/16/2006 Rev.3.01

The gate has internal ESD protection.