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HAL575SF-K Datasheet(PDF) 33 Page - Micronas

Part # HAL575SF-K
Description  Two-Wire Hall-Effect Sensor Family
PDF  36 Pages
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Manufacturer  MICRONAS [Micronas]
Direct Link  http://www.micronas.com
Logo MICRONAS - Micronas

HAL575SF-K Datasheet(HTML) 33 Page - Micronas

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DATA SHEET
HAL57x, HAL58x
Micronas
Dec. 22, 2008; DSH000145_003EN
33
5. Application Notes
5.1. Application Circuit
Fig. 5–1 shows a simple application with a two-wire
sensor. The current consumption can be detected by
measuring the voltage over RL. For correct functioning
of the sensor, the voltage between pin 1 and 2 (VDD)
must be a minimum of 3.75 V. With the maximum cur-
rent consumption of 17 mA, the maximum RL can be
calculated as:
Fig. 5–1: Application circuit 1
For applications with disturbances on the supply line or
radiated disturbances, a series resistor RV (ranging
from 10
Ω to 30 Ω) and a capacitor both placed close
to the sensor are recommended (see Fig. 5–2). In this
case, the maximum RL can be calculated as:
Fig. 5–2: Application circuit 2
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 14).
Typically, the sensors operate with supply voltages
above 3 V. However, below 3.75 V, the current con-
sumption and the magnetic characteristics may be out-
side the specification.
Note: The functionality of the sensor below 3.75 V is
not tested on a regular base. For special test
conditions, please contact Micronas.
5.3. Start-Up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified
in
the
Electrical
Characteristics
(see
page 15). During the initialization time, the current con-
sumption is not defined and can toggle between low
and high.
HAL57x
After ten(O), the current consumption will be high if the
applied magnetic field B is above BON. The current
consumption will be low if B is below BOFF.
HAL58x
In case of sensors with an inverted switching behavior,
the current consumption will be low if B > BOFF and
high if B < BON.
Note: For magnetic fields between BOFF and BON, the
current consumption of the HAL sensor will be
either low or high after applying VDD. In order to
achieve a defined current consumption, the
applied magnetic field must be above BON,
respectively, below BOFF.
R
Lmax
V
SUPmin
3.75 V
–
17 mA
-------------------------------------------
=
1 VDD
2 or
GND
x
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
VSUP
VSIG
RL
R
Lmax
V
SUPmin
3.75 V
–
17 mA
-------------------------------------------
R
V
–
=
1 VDD
2 or
GND
x
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
VSUP
VSIG
RL
RV
4.7 nF



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