74LVC1G99GD datasheet(16/29 Pages) NXP

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74LVC1G99_4

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Product data sheet

Rev. 04 — 16 April 2010

16 of 29

NXP Semiconductors

74LVC1G99

Ultra-configurable multiple function gate; 3-state

[1]

All typical values are measured at nominal VCC.

[2]

tpd is the same as tPLH and tPHL.

[3]

ten is the same as tPZH and tPZL.

[4]

tdis is the same as tPHZ and tPLZ.

[5]

CPD is used to determine the dynamic power dissipation (PD in μW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

× f

o) = sum of the outputs.

ten

enable time

OE to Y; see Figure 22

[3]

VCC = 1.65 V to 1.95 V

5.7

2.0

25.2

32.0

VCC = 2.3 V to 2.7 V

3.8

1.4

11.3

14.0

VCC = 2.7 V

4.2

1.4

8.6

11.0

VCC = 3.0 V to 3.6 V

3.5

1.4

7.0

9.0

VCC = 4.5 V to 5.5 V

2.7

1.4

4.7

6.0

tdis

disable time

OE to Y; see Figure 22

[4]

VCC = 1.65 V to 1.95 V

5.7

3.0

15.0

19.0

VCC = 2.3 V to 2.7 V

3.6

2.0

5.8

7.3

VCC = 2.7 V

4.5

2.0

6.6

8.2

VCC = 3.0 V to 3.6 V

4.5

2.1

5.9

7.4

VCC = 4.5 V to 5.5 V

3.4

1.0

4.5

5.6

CPD

power dissipation

capacitance

per buffer (output enabled);

fi = 10 MHz; CL = 50 pF;

VI = GND to VCC

[5]

VCC = 1.65 V to 1.95 V

VCC = 2.3 V to 2.7 V

VCC = 2.7 V

VCC = 3.0 V to 3.6 V

VCC = 4.5 V to 5.5 V

Table 24.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23.

Symbol Parameter

Conditions

°C

−40 °C to +125 °C

Unit

Min

Typ[1]

Max

Min

Max

(85

°C)

Max

(125

°C)

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