BAP55LX_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 30 July 2007

2 of 8

NXP Semiconductors

BAP55LX

Silicon PIN diode

4.

Marking

5.

Limiting values

6.

Thermal characteristics

7.

Characteristics

Table 3.

Marking

Type number

Marking code

BAP55LX

LC

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

50

V

forward current

-

100

mA

total power dissipation

-

135

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to solder point

78

K/W

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.95

1.1

V

reverse current

-

-

10

nA

-

-

100

nA

diode capacitance

see Figure 1; f = 1 MHz;

-

0.28

-

pF

-

0.23

-

pF

-

0.18

0.28

pF

diode forward resistance

see Figure 2; f = 100 MHz;

-

3.3

4.5

Ω

-

2.2

3.3

Ω

-

0.8

1.2

Ω

-

0.5

0.8

Ω