BAP55LX datasheet(3/8 Pages) NXP

3 / 8 page

BAP55LX_1

Product data sheet

Rev. 01 — 30 July 2007

3 of 8

NXP Semiconductors

BAP55LX

Silicon PIN diode

ISL

isolation

see Figure 3;VR =0V;

f = 900 MHz

f = 1800 MHz

f = 2450 MHz

Lins

insertion loss

see Figure 4;IF = 0.5 mA;

f = 900 MHz

0.24

f = 1800 MHz

0.25

f = 2450 MHz

0.26

Lins

insertion loss

see Figure 4;IF = 1 mA;

f = 900 MHz

0.17

f = 1800 MHz

0.18

f = 2450 MHz

0.19

Lins

insertion loss

see Figure 4;IF =10mA;

f = 900 MHz

0.08

f = 1800 MHz

0.09

f = 2450 MHz

0.10

Lins

insertion loss

see Figure 4;IF = 100 mA;

f = 900 MHz

0.05

f = 1800 MHz

0.07

f = 2450 MHz

0.08

τL

charge carrier life time

when switched from IF = 10 mA to

IR = 6 mA; RL = 100 Ω; measured at

IR =3mA

0.27

µs

series inductance

IF = 100 mA; f = 100 MHz

0.4

Table 6.

Characteristics …continued

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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