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P89V52X2FN Datasheet(PDF) 34 Page - NXP Semiconductors

Part # P89V52X2FN
Description  8-bit 80C51 low power 8 kB flash microcontroller with 256 B RAM, 192 B data EEPROM
PDF  57 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

P89V52X2FN Datasheet(HTML) 34 Page - NXP Semiconductors

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P89V52X2_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 4 May 2009
34 of 57
NXP Semiconductors
P89V52X2
80C51 with 256 B RAM, 192 B data EEPROM
The data EEPROM must be mapped into the code memory address space in order to
read, erase, or program the data EEPROM. The memory is read using the MOVC
instruction.
6.13.1 Features
• ICP with industry-standard commercial programmers
• IAP-Lite allows individual and multiple bytes of data EEPROM to be programmed
under control of the end application.
• Programming and erase over the full operating voltage range
• Programming/Erase using ICP or IAP-Lite
• Program or erases requires 2 ms, 4 ms, or 6 ms, depending on the operation
• Programmable security for the data in each page
• > 100000 typical erase/program cycles for each byte
• Data EEPROM mapped into code space for quick MOVC reading
6.13.2 Register interface
Erasing, programming, and mapping operations are performed in the application under
the control of the microcontroller’s firmware using four SFRs and an internal 64-byte ‘page
register’. These SFRs are:
• FMCON (Flash Control Register). When read, this is the status register. When written,
this is a command register. Note that the status bits are cleared to logic 0s when the
command is written.
• FMADRL, FMADRH (Flash memory address low, Flash memory address high). Used
to specify the byte address within the page register or specify the page within user
code memory (for programming, erase, and reading the data EEPROM is mapped
into the user address space (see Table 32).
• FMDATA (Flash Data Register). Accepts data to be loaded into the page register.
Data is read by mapping the data EEPROM into the code memory space and using the
MOVC instruction.
6.13.3 Mapping the data EEPROM into code space
In order to read, erase, or program the data EEPROM must be mapped into the code
memory address space. This is accomplished by writing the MAP command (09H) to
FMCON. The data EEPROM may be unmapped by writing the UNMAP command (0AH)
to FMCON. The mapping of the data EEPROM pages into code memory space is shown
in Table 32.
6.13.4 Reading the data EEPROM
Reading the data EEPROM can be achieved by performing the following sequence:
Table 32.
Data EEPROM page addresses
Data EEPROM page
Start address End address
0
FF00H
FF3FH
1
FF40H
FF7FH
2
FF80H
FFBFH



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