R2A20118ASP

Preliminary

R03DS0002EJ0100 Rev.1.00

Page 7 of 9

Jul 14, 2010

Electrical Characteristics (cont.)

(Ta = 25°C, VCC = 12 V, RT = 33 k

, BO = 5 V, OCP = TL = OVP2 = GND, CRAMP = 820 pF, FB = COMP,

RAMP-GAIN = OPEN)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Upper clamp voltage

Vzcdh

4.0

4.5

5.0

V

Isource = –3 mA

Lower clamp voltage

Vzcdl

–0.5

–0.1

0.4

V

Isink = 3 mA

ZCD low threshold voltage

Vzcd-lo

0.9

1.3

1.6

V

*

1

ZCD hysteresis

Hyszcd

130

250

360

mV

*

1

Zero

current

detector

Input bias current

Izcd

–14

–10

–6

A

1.2 V < Vzcd < 2.5 V

ZCD open

detector

Slave ZCD open detect delay

time

tzcds

—

100

—

ms

ZCD-S: Open

Gate drive 10 kHz *

1

Soft start

Charge current

Ic-ss

–14

–10

–6

A

SS = 2 V

Charge current

Ic-tl

–4.8

–3.2

–1.2

A

TL = 2 V

OCP-M = 0.5 V

Discharge current

Id-tl

1.2

3.2

4.8

A

TL = 2 V

Timer latch

for

overcurrent

Threshold voltage

Vtl

2.88

3.2

3.52

V

Restart

Restart time delay

Tstart

210

280

350

s

ZCD-M = 10 k



ZCD-S = 10 k

Notes: *1 Design spec.

*2

ZCD-M

Vzcd-lo (1.3 V: provide 250 mV hysteresis)

Tstart (280

μs)

[A period without ZCD-M trigger]

GD-M

Restart pulse width: 1

μs

(Design spec)