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SST49LF004B Datasheet(PDF) 21 Page - Silicon Storage Technology, Inc

Part # SST49LF004B
Description  4 Mbit Firmware Hub
PDF  36 Pages
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Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST49LF004B Datasheet(HTML) 21 Page - Silicon Storage Technology, Inc

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EOL Data Sheet
4 Mbit Firmware Hub
SST49LF004B
21
©2007 Silicon Storage Technology, Inc.
S71307-03-EOL
12/07
DC Characteristics
TABLE 11: DC OPERATING CHARACTERISTICS (ALL INTERFACES)
Symbol
Parameter
Limits
Test Conditions
Min
Max
Units
IDD1
1. IDD active while a Read or Write (Program or Erase) operation is in progress.
Active VDD Current
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP mode)
All other inputs=VIL or VIH
Read
12
mA
All outputs = open, VDD=VDD Max
Write2
2. For PP mode: OE# = WE# = VIH; For LPC mode: f = 1/TRC min, LFRAME# = VIH.
30
mA
See Note 2
ISB
Standby VDD Current
(LPC Interface)
100
µA
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP mode)
LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD,
VDD=VDD Max, All other inputs ≥ 0.9 VDD or ≤ 0.1 VDD
IRY3
3. The device is in Ready mode when no activity is on the LPC bus.
Input Current for Mode
and
ID[3:0] pins
10
mA
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP mode)
LFRAME#=VIL, f=33 MHz, VDD=VDD Max
All other inputs
≥ 0.9 V
DD or ≤ 0.1 VDD
II
Input Leakage Current for
Mode
and ID[3:0] pins
200
µA
VIN=GND to VDD, VDD=VDD Max
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
1
µA
VOUT=GND to VDD, VDD=VDD Max
VIHI
INIT# Input High Voltage
1.1
VDD+0.5
V
VDD=VDD Max
VILI
INIT# Input Low Voltage
-0.5
0.4
V
VDD=VDD Min
VIL
Input Low Voltage
-0.5
0.3 VDD
VVDD=VDD Min
VIH
Input High Voltage
0.5 VDD
VDD+0.5
V
VDD=VDD Max
VOL
Output Low Voltage
0.1 VDD
V
VOH
Output High Voltage
0.9 VDD
V
T11.0 1307
TABLE 12: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
Power-up to Read Operation
100
µs
TPU-WRITE1
Power-up to Write Operation
100
µs
T12.0 1307
TABLE 13: PIN CAPACITANCE (VDD=3.3V, TA=25 °C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
I/O Pin Capacitance
VI/O=0V
12 pF
CIN1
Input Capacitance
VIN=0V
12 pF
T13.0 1307



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