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FN4561.8

September 25, 2008

Die Characteristics

DIE DIMENSIONS

4710µm x 3570µm (185 mils x 140 mils)

Thickness: 483µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS

Glassivation

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0k

Top Metallization

Type: ALSiCu

Thickness: 16.0k

Substrate

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential

Unbiased (DI)

ADDITIONAL INFORMATION

Worst Case Current Density

Transistor Count

225

Metallization Mask Layout

HS-1825ARH

NOTES:

1. This is the oscillator ground (OSCGND) bond pad and must be

connected to GND.

2. PGND and VC each require two bond pad connections.

PGND (12)

OUTA (11)

GND (10)

OSCGND

ILIM (9)

SS (8)

RAMP (7)

CT (6)

RT (5)

(NOTE 1)

(1) IN-

(14) OUTB

(13) VC

(3) EAOUT

(4) CLK/LEB

(2) IN+

VC (13)

(NOTE 2)

(NOTE 2)

(12) PGND

(NOTE 2)

(NOTE 2)

HS-1825ARH